參數(shù)資料
型號: BFS386L6
英文描述: ?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz?
中文描述: ?NPN硅雙混合型射頻晶體管TSLP - 6 VCO模塊封裝到4GHz的理想?
文件頁數(shù): 2/4頁
文件大小: 103K
代理商: BFS386L6
Feb-28-2002
2
BFS386L6
Maximum Ratings
Parameter
Symbol
Value
Unit
mA
Base current
TR1
TR2
I
B
5
14
Total power dissipation
1)
T
S
= tbd °C, TR1
T
S
= tbd °C, TR2
Junction temperature
TR1
TR2
P
tot
tbd
tbd
mW
T
j
150
150
°C
Ambient temperature
TR1
TR2
T
A
-65 ... 150
-65 ... 150
Storage temperature
TR1
TR2
T
stg
-65 ... 150
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
2)
TR1
TR2
Symbol
R
thJS
Value
tbd
tbd
Unit
K/W
1
T
S is measured on the collector lead at the soldering point to the pcb
2For calculation of
R
thJA please refer to Application Note Thermal Resistance
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