- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373019 > BFS360L6 ?NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz ? PDF資料下載
參數(shù)資料
| 型號： | BFS360L6 |
| 英文描述： | ?NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz ? |
| 中文描述： | ？NPN硅雙型射頻晶體管TSLP - 6 VCO模塊封裝到4GHz的理想？ |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 99K |
| 代理商： | BFS360L6 |
BFS360L6
Jan-30-2003
3
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
(verified by random sampling)
Transition frequency
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
f
T
-
14
-
GHz
C
cb
-
0.3
-
pF
C
ce
-
0.15
-
C
eb
-
0.45
-
F
min
-
1
-
dB
Power gain, maximum available
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
G
ma
-
-
13.5
9.5
-
-
Transducer gain
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50 ,
f
= 1.8 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50 ,
f
= 3 GHz
|
S
21e
|
2
-
-
12
8
-
-
dB
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 15 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
1dB Compression point at output
3)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50 ,
f
= 1.8 GHz
IP
3
-
24
-
dBm
P
-1dB
-
tbd
-
1
G
ma
= |
S
21e
/
S
12e
| (k-(k2-1)
1/2
)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 from 0.1 MHz to 6 GHz
3DC current at no input power
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFS386L6 | ?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz? |
| BFS55A | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFS62 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFT49 | NPN |
| BFT57DCSM | TRANSISTOR | BJT | PAIR | NPN | 160V V(BR)CEO | 200MA I(C) | LLCC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFS360L6E6327NT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 6V 0.035A 6-Pin TSLP T/R |
| BFS380L6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor |
| BFS380L6E6327NT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 6V 0.08A 6-Pin TSLP T/R |
| BFS386L6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz? |
| BFS460L6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF TWIN Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。