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參數(shù)資料
| 型號(hào)： | BFS360L6 |
| 英文描述： | ?NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz ? |
| 中文描述： | ？NPN硅雙型射頻晶體管TSLP - 6 VCO模塊封裝到4GHz的理想？ |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 99K |
| 代理商： | BFS360L6 |
BFS360L6
Jan-30-2003
1
NPN Silicon RF Transistor
Preliminary data
Low voltage/ Low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
P-TSLP-6-1
1
2
3
4
5
6
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFS360L6
Marking
FB
Pin Configuration
Package
1=C1 2=E1 3=C2 4=B2
5=E2
6=B1 TSLP-6-1
Maximum Ratings
Parameter
Symbol
Value
6
15
15
2
Unit
V
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
Collector current
Base current
Total power dissipation
1)
T
S
102°C
Junction temperature
Ambient temperature
35
4
210
mA
mW
T
j
T
A
T
stg
150
°C
-65 ... 150
Storage temperature
-65 ... 150
Thermal Resistance
Parameter
Junction - soldering point
2)
Symbol
Value
Unit
K/W
R
thJS
230
1
T
S is measured on the collector lead at the soldering point to the pcb
2For calculation of
R
thJA
please refer to Application Note Thermal Resistance
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| BFS360L6E6327NT | 制造商:Infineon Technologies AG 功能描述:Trans GP BJT NPN 6V 0.035A 6-Pin TSLP T/R |
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| BFS386L6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:?NPN Silicon TWIN mixed type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz? |
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