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參數(shù)資料
| 型號： | BFR53 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 2 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BFR53 |
1997 Oct 28
3
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point T
s
≤
85
°
C; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
25
TYP.
0.9
MAX.
UNIT
I
CBO
h
FE
collector cut-off current
DC current gain
I
E
= 0; V
CB
= 10 V
I
C
= 25 mA; V
CE
= 5 V; see Fig.2
I
C
= 50 mA; V
CE
= 5 V; see Fig.2
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz;
see Fig.3
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
see Fig.4
I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°
C; see Fig.5
I
C
= 2 mA; V
CE
= 5 V; f = 500 MHz;
T
amb
= 25
°
C; see Fig.6
50
nA
C
c
collector capacitance
pF
C
e
C
re
emitter capacitance
feedback capacitance
1.5
0.9
pF
pF
f
T
transition frequency
2
GHz
G
UM
maximum unilateral power gain
(note 1)
noise figure
10.5
dB
F
5
dB
G
UM
10 log
S
2
1
S
11
–
1
S
22
–
--------------------------------------------------------------dB
=
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| BFR540,215 | 功能描述:射頻雙極小信號晶體管 NPN 120MA 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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