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參數(shù)資料
| 型號： | BFR53 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN 2 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BFR53 |
1997 Oct 28
2
Philips Semiconductors
Product specification
NPN 2 GHz wideband transistor
BFR53
FEATURES
Very low intermodulation distortion
Very high power gain.
APPLICATIONS
Thick and thin-film circuits.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
Marking code:
N1.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
CM
P
tot
C
re
collector-base voltage
collector-emitter voltage
peak collector current
total power dissipation
feedback capacitance
open emitter
open base
f
>
1 MHz
T
s
≤
85
°
C
I
C
= 2 mA; V
CE
= 5 V; f = 1 MHz;
T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 5 V; f = 500 MHz;
T
j
= 25
°
C
0.9
18
10
100
250
V
V
mA
mW
pF
f
T
transition frequency
2
GHz
G
UM
maximum unilateral power gain I
C
= 30 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°
C
10.5
dB
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
18
10
2.5
50
100
250
+150
150
V
V
V
mA
mA
mW
°
C
°
C
f
>
1 MHz
T
s
≤
85
°
C (note 1)
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| BFR540,215 | 功能描述:射頻雙極小信號晶體管 NPN 120MA 15V 9GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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