參數(shù)資料
型號: BFG540
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN 9 GHz wideband transistor
封裝: BFG540/X<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,;BFG540/X/C<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<Alw
文件頁數(shù): 6/14頁
文件大?。?/td> 312K
代理商: BFG540
NXP
Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG540; BFG540/X;
BFG540/XR
Fig.7 Gain as a function of collector current.
V
CE
= 8 V; f = 900 MHz.
MSG = maximum stable gain; G
= maximum available gain;
G
UM
= maximum unilateral power gain.
handbook, halfpage
gain
(dB)
0
20
IC (mA)
40
60
0
20
15
10
5
MRA752
GUM
Gmax
MSG
Fig.8 Gain as a function of collector current.
V
CE
= 8 V; f = 2 GHz.
G
max
= maximum available gain;
G
UM
= maximum unilateral power gain.
handbook, halfpage
gain
(dB)
0
20
IC (mA)
40
60
0
20
15
10
5
MRA753
GUM
Gmax
Fig.9 Gain as a function of frequency.
I
C
= 10 mA; V
CE
= 8 V.
G
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available gain.
handbook, halfpage
gain
(dB)
0
10
MRA754
10
2
10
3
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
Fig.10 Gain as a function of frequency.
handbook, halfpage
gain
(dB)
0
10
MRA755
10
2
10
3
10
4
10
20
30
f (MHz)
40
MSG
GUM
Gmax
I
C
= 40 mA; V
CE
= 8 V.
G
= maximum unilateral power gain;
MSG = maximum stable gain; G
max
= maximum available gain.
Rev. 05 - 21 November 2007
6 of 14
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