參數(shù)資料
型號: BFG480W
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN wideband transistor
封裝: BFG480W<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2003,;BFG480W<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always
文件頁數(shù): 11/16頁
文件大?。?/td> 362K
代理商: BFG480W
1998 Oct 21
11
NXP Semiconductors
Product specification
NPN wideband transistor
BFG480W
Fig.18 Common emitter test circuit for class-AB operation at 2 GHz.
handbook, full pagewidth
MGM221
VC
VS
R1
TR1
L1
L4
L5
C4
C2
DUT
R2
C3
C1
RF input
50
Ω
RF output
50
Ω
L2
L3
C6
R3
C7
C5
List of components used in test circuit
(see Figs 18 and 19)
Notes
1.
2.
American Technical Ceramics type 100A or capacitor of same quality.
The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (
r
= 6.15,
tan
= 0.0019); thickness 0.64 mm, copper cladding = 35
m.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE No.
C1, C5
C2, C4
C3, C6
C7
L1, L4
L2
L3
L5
R1
R2, R3
TR1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor, note 1
multilayer ceramic chip capacitor; note 1
stripline; note 2
stripline; note 2
stripline; note 2
Grade 4S2 Ferroxcube chip bead
metal film resistor
metal film resistor
NPN transistor
24 pF
2 pF
15 pF
1 nF
100
50
50
18 x 0.2 mm
5 x 0.8 mm
6 x 0.8 mm
4330 030 36300
220
; 0.4 W
10
; 0.4 W
BC817
9335 895 20215
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BFG480W,135 功能描述:射頻雙極小信號晶體管 Single NPN 4.5V 250mA 360mW 40 21GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel
BFG480W115 制造商:NXP Semiconductors 功能描述:TRANS NPN 4.5V 21GHZ SOT343R
BFG-5000 制造商:Misc 功能描述:
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