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參數(shù)資料
| 型號： | BFG480 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | NPN wideband transistor |
| 中文描述： | 叩寬帶晶體管 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 160K |
| 代理商： | BFG480 |
1998 Oct 21
2
Philips Semiconductors
Product specification
NPN wideband transistor
BFG480W
FEATURES
High power gain
High efficiency
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance
Linear and non-linear operation.
APPLICATIONS
RF front end with high linearity system demands
(CDMA)
Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a 4-pin dual-emitter
SOT343R plastic package.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
Fig.1 Simplified outline SOT343R.
Marking code:
P6.
handbook, halfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CEO
I
C
P
tot
f
T
G
max
F
G
p
collector-emitter voltage open base
collector current (DC)
total power dissipation
transition frequency
maximum gain
noise figure
power gain
80
21
16
1.8
13.5
4.5
250
360
V
mA
mW
GHz
dB
dB
dB
T
s
≤
60
°
C
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
I
C
= 80 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
°
C
I
C
= 8 mA; V
CE
= 2 V; f = 2 GHz;
Γ
S
=
Γ
opt
Pulsed; class-AB;
δ
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
Pulsed; class-AB;
δ
< 1 : 2; t
p
= 5 ms;
V
CE
= 3.6 V; f = 2 GHz; P
L
= 100 mW
η
C
collector efficiency
45
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFG480W | 制造商:NXP Semiconductors 功能描述:BFG480W NPN wideband transistor |
| BFG480W,115 | 功能描述:射頻雙極小信號晶體管 NPN 4.5V 21GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG480W,135 | 功能描述:射頻雙極小信號晶體管 Single NPN 4.5V 250mA 360mW 40 21GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG480W115 | 制造商:NXP Semiconductors 功能描述:TRANS NPN 4.5V 21GHZ SOT343R |
| BFG-5000 | 制造商:Misc 功能描述: |
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