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參數(shù)資料
| 型號： | BFG425W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 25 GHz wideband transistor |
| 封裝： | BFG425W/B<SOT343R (CMPAK-4)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;BFG425W/C<SOT343R (CMPAK-4)|<<http://www.nxp.com/packages/SOT343R.html<1<Al |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 143K |
| 代理商： | BFG425W |
2010 Sep 15
2
NXP Semiconductors
Product specification
NPN 25 GHz wideband transistor
BFG425W
FEATURES
Very high power gain
Low noise figure
High transition frequency
Emitter is thermal lead
Low feedback capacitance.
APPLICATIONS
RF front end
Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
Radar detectors
Pagers
Satellite television tuners (SATV)
High frequency oscillators.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
DESCRIPTION
1
2
3
4
emitter
base
emitter
collector
Fig.1 Simplified outline SOT343R.
Marking code:
P5*
handbook, halfpage
Top view
MSB842
2
1
4
3
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
50
TYP.
25
80
95
25
20
1.2
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
max
F
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum power gain
noise figure
open emitter
open base
10
4.5
30
135
120
V
V
mA
mW
T
s
103
C
I
C
= 25 mA; V
CE
= 2 V; T
j
= 25
C
I
C
= 0; V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
I
C
= 2 mA; V
CE
= 2 V; f = 2 GHz;
S
=
opt
fF
GHz
dB
dB
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
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PDF描述 |
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| BFG425W | NPN 25 GHz wideband transistor |
| BFG425W | NPN 25 GHz wideband transistor |
| BFG425W | NPN 25 GHz wideband transistor |
| BFG425W | NPN 25 GHz wideband transistor |
| BFG480W | NPN wideband transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BFG425W,115 | 功能描述:射頻雙極小信號晶體管 NPN 4.5V 25GHZ RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG425W,135 | 功能描述:射頻雙極小信號晶體管 Single NPN 4.5V 25mA 135mW 50 25GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFG425W@115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 4.5V 0.03A 4-Pin(3+Tab) CMPAK T/R |
| BFG425W115 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 4 制造商:NXP Semiconductors 功能描述:TRANS NPN 4.5V 25GHZ SOT-343R |
| BFG480 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband transistor |
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