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參數(shù)資料
| 型號(hào)： | BFG35 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 4 GHz wideband transistor |
| 封裝： | BFG35<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 34, 2003,; |
| 文件頁(yè)數(shù)： | 3/14頁(yè) |
| 文件大小： | 283K |
| 代理商： | BFG35 |
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1999 Aug 24
3
NXP Semiconductors
Product specification
NPN 4 GHz wideband transistor
BFG35
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2.
d
im
=
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C
V
p
= V
o
at d
im
=
60 dB; f
p
= 795.25 MHz;
V
q
= V
o
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
d
im
=
60 dB (DIN 45004B); I
C
= 100 mA; V
CE
= 10 V; R
L
= 75
; T
amb
= 25
C
V
p
= V
o
at d
im
=
60 dB; f
p
= 445.25 MHz;
V
q
= V
o
6 dB; f
q
= 453.25 MHz;
V
r
= V
o
6 dB; f
r
= 455.25 MHz;
measured at f
(p+q
r)
= 443.25 MHz.
I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
o
= 50 dBmV;
f
(p+q)
= 450 MHz; f
p
= 50 MHz; f
q
= 400 MHz.
I
C
= 60 mA; V
CE
= 10 V; R
L
= 75
;
V
p
= V
q
= V
O
= 50 dBmV;
f
(p+q)
= 810 MHz; f
p
= 250 MHz; f
q
= 560 MHz.
3.
4.
5.
SYMBOL
PARAMETER
CONDITIONS
up to T
s
= 135
C (note 1)
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
70
2
10
1.2
4
MAX.
UNIT
A
I
CBO
h
FE
C
c
C
e
C
re
f
T
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 10 V
I
C
= 100 mA; V
CE
= 10 V
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 10 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 500 MHz; T
amb
= 25
C
I
C
= 100 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
C
note 2
note 3
note 4
note 5
1
pF
pF
pF
GHz
G
UM
maximum unilateral power gain
(note 1)
15
dB
11
dB
V
o
output voltage
750
800
55
57
mV
mV
dB
dB
d
2
second order intermodulation
distortion
G
UM
10
s
1
1
s
112
–
s
222
–
-------------------------------------------------------- dB.
log
=
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