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參數(shù)資料
| 型號(hào)： | BFG17A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 3 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | BFG17A |
1995 Sep 12
3
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
.
2.
d
im
=
60 dB (DIN 45004B, para. 6,3: 3-tone); I
C
= 14 mA; V
CE
= 10 V; Z
L
= 75
.
V
p
= V
o
; f
p
= 795.25 MHz;
V
q
= V
o
6 dB; f
q
= 803.25 MHz;
V
r
= V
o
6 dB; f
r
= 805.25 MHz;
measured at f
(p+q
r)
= 793.25 MHz.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to soldering point
up to T
s
= 85
°
C; note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
TYP.
75
MAX.
UNIT
I
CBO
h
FE
collector cut-off current
DC current gain
I
E
= 0; V
CB
= 10 V
I
C
= 25 mA; V
CE
= 1 V;
T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 5 V;
f = 500 MHz; T
amb
= 25
°
C
I
E
= 0; V
CB
= 10 V; f = 1 MHz;
T
amb
= 25
°
C
I
C
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°
C
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°
C; Z
S
= 60
; b
s
= opt.
note 2
50
150
nA
f
T
transition frequency
2.8
GHz
C
c
collector capacitance
0.7
pF
C
e
C
re
G
UM
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
1.25
0.4
15
pF
pF
dB
F
2.5
dB
V
o
output voltage
150
mV
G
UM
10
s
)
1
2
1
s
11
–
(
s
22
2
–
(
)
------------------------------------------------------------ dB.
log
=
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