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參數(shù)資料
| 型號(hào)： | BFG17A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | NPN 3 GHz wideband transistor |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, 4 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 60K |
| 代理商： | BFG17A |
1995 Sep 12
2
Philips Semiconductors
Product specification
NPN 3 GHz wideband transistor
BFG17A
DESCRIPTION
NPN wideband transistor in a
microminiature plastic SOT143
surface mounting envelope with
double emitter bonding.
It is intended for use in wideband
aerial amplifiers using SMD
technology.
PINNING
PIN
DESCRIPTION
Code: E6
1
2
3
4
collector
base
emitter
emitter
Fig.1 SOT143.
handbook, 2 columns
Top view
MSB014
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
20
TYP.
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
open emitter
open base
25
15
50
300
150
V
V
mA
mW
up to T
s
= 85
°
C; note 1
I
C
= 25 mA; V
CE
= 1 V;
T
amb
= 25
°
C
I
C
= 25 mA; V
CE
= 5 V;
f = 500 MHz; T
amb
= 25
°
C
I
C
= 0; V
CE
= 5 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V;
f = 800 MHz; T
amb
= 25
°
C
I
C
= 2 mA; V
CE
= 5 V; f = 800 MHz;
T
amb
= 25
°
C; Z
S
= 60
; b
s
= opt.
f
T
transition frequency
2.8
GHz
C
re
G
UM
feedback capacitance
maximum unilateral power gain
0.4
15
pF
dB
F
noise figure
2.5
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
25
15
2.5
50
300
+150
175
V
V
V
mA
mW
°
C
°
C
up to T
s
= 85
°
C; note 1
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