參數(shù)資料
型號: BFG11W
廠商: NXP Semiconductors N.V.
英文描述: NPN 2 GHz power transistor
中文描述: 叩2 GHz的功率晶體管
文件頁數(shù): 5/12頁
文件大?。?/td> 98K
代理商: BFG11W
1996 Jun 04
5
Philips Semiconductors
Product specification
NPN 2 GHz power transistor
BFG11W/X
List of components used in test circuit (see Figs
5
and
6
)
Notes
1.
2.
American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality.
The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric
ε
r
= 6.15;
tan
δ
= 0.0019; thickness = 0.64 mm; copper cladding = 35
μ
m.
Or equivalent (V
BE
= 0.65 V at T
amb
= 25
°
C).
3.
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE N0.
C1, C8, C9, C10
C2, C3
C4
C5
C6, C7,
C11, C12, C13
C14, C15
L1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
multilayer ceramic chip capacitor; note 1
electrolytic capacitor
stripline; note 2
24 pF
2 pF
1.2 pF
0.2 pF
1.3 pF
10 nF
470
μ
F; 10 V
2222 032 14152
length 22.5 mm
width 0.9 mm
length 6 mm
width 0.9 mm
length 1 mm
width 0.9 mm
length 2.5 mm
width 0.9 mm
length 4.5 mm
width 0.9 mm
length 24.5 mm
width 0.9 mm
length 20 mm
width 0.9 mm
length 10.5 mm
width 0.9 mm
length 4.4 mm
width 0.4 mm
length 19.7 mm
width 0.4 mm
L2
stripline; note 2
L3
stripline; note 2
L4
stripline; note 2
L5
stripline; note 2
L6
stripline; note 2
L7
stripline; note 2
L8
stripline; note 2
L9
stripline; note 2
L10
stripline; note 2
L11, L12
R1
R2
R3
T1
RF choke
metal film resistor
metal film resistor
metal film resistor
bias transistor
1
μ
H
78.7
;
0.4 W
38.3
;
0.4 W
10
;
0.4 W
BC548; note 3
4330 030 36301
相關(guān)PDF資料
PDF描述
BFG11 NPN 2 GHz RF power transistor(NPN 2 GHz 射頻功率晶體管)
BFG11X NPN 2 GHz RF power transistor(NPN 2 GHz 射頻功率晶體管)
BFG16A NPN 2GHz wideband transistor(NPN 2GHz 寬帶晶體管)
BFG16 NPN 2 GHz wideband transistor
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