參數(shù)資料
型號(hào): BF861
廠商: NXP Semiconductors N.V.
英文描述: N-channel junction FETs
中文描述: N溝道結(jié)場(chǎng)效應(yīng)管
文件頁數(shù): 7/12頁
文件大?。?/td> 102K
代理商: BF861
1997 Sep 04
7
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
Fig.11 Typical input characteristics.
BF861C
V
DS
= 8 V.
handbook, halfpage
(mA)
2.5
0
0
4
MBD469
8
12
16
2
1.5
1
0.5
VGS
Fig.12 Typical output characteristics.
BF861C
V
DS
= 8 V.
handbook, halfpage
(mA)
0
10
0
4
MBD470
8
12
16
2
4
6
8
VDS
VGS= 0 V
400 mV
600 mV
800 mV
200 mV
1 V
Fig.13 Input and reverse transfer capacitance
as functions of gate-source voltage;
typical values.
V
DS
= 8 V.
f = 1 MHz.
handbook, halfpage
Cis
8
6
4
0
0
8
MBD471
2
6
4
2
VGS
(pF)
rs
rs
C
is
C
Fig.14 Gate current as a function of
drain-gate voltage; typical values.
V
DS
= 8 V.
handbook, halfpage
10
10
3
10
4
10
5
25
0
MBD472
5
10
15
20
10
2
10
1
1
DG
IG
(nA)
1 mA
0.1 mA
ID= 10 mA
IGSS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF861A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel junction FETs
BF861A T/R 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
BF861A,215 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS(最大值/最小值): 電阻汲極/源極 RDS(導(dǎo)通): 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流(Vgs=0 時(shí)的 Idss):25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel
BF861A,215-CUT TAPE 制造商:NXP 功能描述:BF861A Series 25 V 6.5 mA 250 mW Surface Mount N-Channel Junction FETs-SOT-23-3
BF861B 制造商:PHILIPS-SEMI 功能描述: