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參數(shù)資料
| 型號(hào)： | BF859 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN high-voltage transistors |
| 中文描述： | 0.1 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-202 |
| 封裝： | PLASTIC, TO-202, 3 PIN |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | BF859 |
1999 Apr 14
5
Philips Semiconductors
Product specification
NPN high-voltage transistor
BF859
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
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PDF描述 |
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| BF861 | N-channel junction FETs |
| BF869S | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BF869 | NPN high-voltage transistors |
| BF869SA | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BF871S | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF859A | 制造商:NXP Semiconductors 功能描述:300V 0.3A 1.8W Ebc NPN Transistor TO-202Aa |
| BF861 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel junction FETs |
| BF861A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel junction FETs |
| BF861A T/R | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
| BF861A,215 | 功能描述:射頻JFET晶體管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:N-Channel 正向跨導(dǎo) gFS（最大值/最小值）: 電阻汲極/源極 RDS（導(dǎo)通）: 漏源電壓 VDS:40 V 閘/源截止電壓:5 V 閘/源擊穿電壓:40 V 最大漏極/柵極電壓:40 V 漏極電流（Vgs=0 時(shí)的 Idss）:25 mA to 75 mA 漏極連續(xù)電流: 功率耗散:250 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23 封裝:Reel |
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