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參數(shù)資料
| 型號： | BF419 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN high-voltage transistor |
| 中文描述： | Si, SMALL SIGNAL TRANSISTOR, TO-126 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BF419 |
1997 Apr 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistor
BF419
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Precautions should be taken during switch-on of the BF419 where an overshoot of current is likely to occur.
The amplitude of the overshoot depends on the relative magnitude of stray external capacities to the transistor
collector capacity. It is desirable to keep the stray capacities to a minimum by short lead lengths etc. so as to minimize
the area of the switching path.
THERMAL CHARACTERISTICS
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
open base
open collector
65
65
300
250
5
100
300
100
6
800
+150
150
+150
V
V
V
mA
mA
mA
W
mW
°
C
°
C
°
C
note 1
T
mb
≤
90
°
C
T
amb
≤
70
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
R
th j-mb
thermal resistance from junction to ambient
thermal resistance from junction to mounting base
100
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
C
re
f
T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
feedback capacitance
transition frequency
I
E
= 0; V
CB
= 250 V
I
C
= 0; V
EB
= 3 V
I
C
= 20 mA; V
CE
= 10 V
I
C
= 200 mA; I
B
= 20 mA; note 1
I
E
= i
e
= 0; V
CB
= 30 V; f = 1 MHz
I
C
= i
c
= 0; V
CE
= 30 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 100 MHz
45
90
50
50
6
4.5
3.5
nA
nA
V
pF
pF
MHz
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| BF420,112 | 功能描述:兩極晶體管 - BJT TRANS HV BULK DLT PIN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BF420,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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