參數(shù)資料
型號: BF1216
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: Dual N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, MICRO MINIATURE, PLASTIC, SC-88, 6 PIN
文件頁數(shù): 5/17頁
文件大?。?/td> 185K
代理商: BF1216
BF1216_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 29 April 2010
5 of 17
NXP Semiconductors
BF1216
Dual N-channel dual gate MOSFET
8. Dynamic characteristics
[1]
Calculated from S-parameters.
[2]
Measured in
Figure 17
test circuit.
Table 8.
Common source; T
amb
= 25
°
C; V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 19 mA.
Symbol Parameter
|
y
fs
|
forward transfer admittance
C
iss(G1)
input capacitance at gate1
C
iss(G2)
input capacitance at gate2
C
oss
output capacitance
C
rss
reverse transfer capacitance
G
tr
transducer power gain
Dynamic characteristics for amplifier A and B
Conditions
f = 100 MHz; T
j
= 25
°
C; I
D
= 18 mA
f = 100 MHz
f = 100 MHz
f = 100 MHz
f = 100 MHz
amplifier A; B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
amplifier B; B
S
= B
S(opt)
; B
L
= B
L(opt)
f = 200 MHz; G
S
= 2 mS; G
L
= 0.5 mS
f = 400 MHz; G
S
= 2 mS; G
L
= 1 mS
f = 800 MHz; G
S
= 3.3 mS; G
L
= 1 mS
f = 11 MHz; G
S
= 20 mS; B
S
= 0 S
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 % at 40 dB AGC; f
w
= 50 MHz;
f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 20 dB AGC
at 40 dB AGC
Min Typ Max Unit
23
27
2.5
2.4
0.8
25
38
-
-
-
-
mS
pF
pF
pF
fF
[1]
-
[1]
-
[1]
-
[1]
-
[1]
-
-
-
34
30
26
-
-
-
dB
dB
dB
[1]
-
-
-
-
-
-
34
30
26
-
1.0
1.5
-
-
-
5
-
-
dB
dB
dB
dB
dB
dB
NF
noise figure
Xmod
cross modulation
[2]
90
-
-
105 107 -
104 -
100 -
104 -
dB
μ
V
dB
μ
V
dB
μ
V
dB
μ
V
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