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參數(shù)資料
| 型號： | BF1211WR |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封裝： | BF1211WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;BF1211WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Alwa |
| 文件頁數(shù)： | 3/16頁 |
| 文件大?。?/td> | 415K |
| 代理商： | BF1211WR |
2003 Dec 16
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1211; BF1211R; BF1211WR
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
T
s
is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF1211
BF1211R
BF1211WR
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
SOT143B
SOT143R
SOT343R
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
G1
I
G2
P
tot
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
BF1211; BF1211R
BF1211WR
storage temperature
junction temperature
6
30
10
10
V
mA
mA
mA
T
s
116
C; note 1
T
s
122
C; note 1
65
180
180
+150
150
mW
mW
C
C
T
stg
T
j
SYMBOL
PARAMETER
VALUE
UNIT
R
th(j-s)
thermal resistance from junction to soldering point
BF1211; BF1211R
BF1211WR
185
155
K/W
K/W
相關PDF資料 |
PDF描述 |
|---|---|
| BF1212 | N-channel dual-gate MOSFET |
| BF1212 | N-channel dual-gate MOSFET |
| BF1212R | N-channel dual-gate MOSFET |
| BF1212WR | N-channel dual-gate MOSFET |
| BF1212R | N-channel dual-gate MOSFET |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1211WR,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1211WR,135 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF1212 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1212,215 | 功能描述:射頻MOSFET小信號晶體管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1212-03SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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