參數(shù)資料
型號: BF1210
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁數(shù): 6/21頁
文件大?。?/td> 252K
代理商: BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
6 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
8.1.1
Graphs for amplifier A
(1) V
G2-S
= 4.0 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3.0 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2.0 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1.0 V.
V
DS(A)
= 5 V; T
j
= 25
°
C.
(1) V
G1-S(A)
= 1.8 V.
(2) V
G1-S(A)
= 1.7 V.
(3) V
G1-S(A)
= 1.6 V.
(4) V
G1-S(A)
= 1.5 V.
(5) V
G1-S(A)
= 1.4 V.
(6) V
G1-S(A)
= 1.3 V.
(7) V
G1-S(A)
= 1.2 V.
(8) V
G1-S(A)
= 1.1 V.
(9) V
G1-S(A)
= 1.0 V.
V
G2-S
= 4 V; T
j
= 25
°
C.
Fig 3.
Amplifier A: output characteristics; typical
values
Fig 2.
Amplifier A: transfer characteristics; typical
values
001aaf476
V
G1-S
(V)
0
2.0
1.5
0.5
1.0
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaf477
V
DS
(V)
0
6
4
2
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
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