參數(shù)資料
型號(hào)： BF1210
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁(yè)數(shù)： 20/21頁(yè)
文件大?。?/td> 252K
代理商： BF1210
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
20 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
13. Legal information
13.1
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1210 T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1210,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-1210-05SV 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk
BF-1210-05SV06 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk
BF-1210-05SV06-Y103 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
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