參數(shù)資料
型號: BF1208
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁數(shù): 3/23頁
文件大?。?/td> 286K
代理商: BF1208
BF1208
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NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
3 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3.
Type number
4. Marking
Table 4.
Type number
BF1208
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Per MOSFET
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
I
G1
gate1 current
I
G2
gate2 current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the source lead.
Ordering information
Package
Name
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
BF1208
Marking codes
Marking code
2L
Limiting values
Conditions
Min
Max
Unit
-
-
6
30
10
10
180
+150
150
V
mA
-
-
mA
mA
mW
C
C
T
sp
109
C
[1]
-
65
-
Fig 1.
Power derating curve
T
sp
(C)
0
200
150
50
100
001aac193
100
150
50
200
250
P
tot
(mW)
0
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BF1208,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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