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參數(shù)資料
| 型號： | BF1208 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 2/23頁 |
| 文件大小： | 286K |
| 代理商： | BF1208 |
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
2 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1.
Per MOSFET unless otherwise specified.
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
y
fs
forward transfer admittance
[1]
T
sp
is the temperature at the soldering point of the source lead.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Quick reference data
Conditions
Min
-
-
Typ
-
-
-
Max Unit
6
30
180
V
mA
mW
T
sp
109
C
f = 1 MHz
amplifier A; I
D
= 19 mA
amplifier B; I
D
= 13 mA
f = 1 MHz
amplifier A
amplifier B
[1]
-
26
28
31
33
41
43
mS
mS
C
iss(G1)
input capacitance at gate1
-
-
-
-
-
2.2
2.0
20
1.3
1.4
2.7
2.5
-
1.9
2.1
pF
pF
fF
dB
dB
C
rss
NF
reverse transfer capacitance f = 1 MHz
noise figure
amplifier A; f = 400 MHz
amplifier B; f = 800 MHz
input level for k = 1 % at
40 dB AGC
amplifier A
amplifier B
Xmod
cross-modulation
100
100
-
105
103
-
-
-
150
dB
V
dB
V
C
T
j
junction temperature
Discrete pinning
Description
gate1 (AMP A)
gate2
gate1 (AMP B)
drain (AMP B)
source
drain (AMP A)
Simplified outline
Symbol
1
2
3
4
5
6
sym089
G1B
G1A
G2
S
DA
DB
AMP B
AMP A
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| BF1208 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1210 | Dual N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1208 T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1208,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF-1208-03SV06-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV07-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF-1208-03SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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