參數(shù)資料
型號: BF1208
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1208<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,;
文件頁數(shù): 18/23頁
文件大?。?/td> 286K
代理商: BF1208
BF1208
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
18 of 23
NXP Semiconductors
BF1208
Dual N-channel dual gate MOSFET
9. Test information
Fig 33. Cross-modulation test set-up for amplifier A
Fig 34. Cross-modulation test set-up for amplifier B
50
Ω
10 k
Ω
RGEN
50
Ω
RL
50
Ω
50
Ω
RG1
4.7 nF
4.7 nF
4.7 nF
G2
S
G1B
DB
DA
4.7 nF
4.7 nF
4.7 nF
G1A
BF1208
V
GG
0V
V
DS(B)
5V
V
DS(A)
5V
V
AGC
L2
2.2
μ
H
L1
2.2
μ
H
001aac201
Vi
50
Ω
10 k
Ω
RGEN
50
Ω
50
Ω
RG1
4.7 nF
4.7 nF
4.7 nF
G2
S
G1B
DB
DA
4.7 nF
4.7 nF
4.7 nF
G1A
BF1208
V
GG
5V
V
DS(B)
5V
V
DS(A)
5V
V
AGC
L2
2.2
μ
H
L1
2.2
μ
H
RL
50
Ω
001aac202
Vi
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BF1208 T/R 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1208,115 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF-1208-03SV06-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF-1208-03SV07-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
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