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參數(shù)資料
| 型號： | BF1206 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 16/22頁 |
| 文件大?。?/td> | 628K |
| 代理商： | BF1206 |
2003 Nov 17
16
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
handbook, halfpage
0
20
10
0
2
(1)
(2)
(3)
(4)
(5)
4
6
MLE280
VG2-S (V)
IG1
(
μ
A)
Fig.27 Gate 1 current as a function of gate 2
voltage; typical values; amplifier b.
V
DS
5 V; T
j
= 25
C.
R
G1
= 150 k
(connected to V
GG
); see Fig.35.
(1) V
GG
= 5 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3 V.
handbook, halfpage
Vunw
(dB
μ
V)
0
10
50
110
90
80
100
20
gain reduction (dB)
30
40
MLE282
Fig.28 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical values;
amplifier b.
V
DS
= 5 V; V
= 5 V; R
G1
= 150 k
; f = 50 MHz; f
unw
= 60 MHz;
T
amb
= 25
C; see Fig.35.
handbook, halfpage
reduction
(dB)
10
0
1
2
VAGC (V)
4
50
3
20
30
40
MLE281
Fig.29 Typical gain reduction as a function of AGC
voltage; typical values; amplifier b.
V
= 5 V; V
GG
= 5 V; R
G1
= 150 k
; f = 50 MHz; T
amb
= 25
C;
see Fig.35.
handbook, halfpage
ID
(mA)
0
10
50
12
4
0
8
20
gain reduction (dB)
30
40
MLE283
Fig.30 Drain current as a function of gain
reduction; typical values; amplifier b.
V
= 5 V; V
GG
= 5 V; R
G1
= 150 k
; f = 50 MHz; T
amb
= 25
C;
see Fig.35.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1206,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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