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參數(shù)資料
| 型號： | BF1206 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 13/22頁 |
| 文件大小： | 628K |
| 代理商： | BF1206 |
2003 Nov 17
13
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
GRAPHS FOR AMPLIFIER b
handbook, halfpage
0
0.5
1
2
VG1-S (V)
ID
(mA)
0
10
20
1.5
MLE272
(7)
(6)
(5)
(4)
(1)
(2)
(3)
Fig.19 Transfer characteristics; typical values;
amplifier b.
V
DS
= 5 V; T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
ID
(mA)
0
2
4
VDS (V)
6
24
8
0
16
MLE273
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Fig.20 Output characteristics; typical values;
amplifier b.
V
G2-S
= 4 V; T
j
= 25
C.
(1) V
G1-S
= 1.5 V.
(2) V
G1-S
= 1.4 V.
(3) V
G1-S
= 1.3 V.
(4) V
G1-S
= 1.2 V.
(5) V
G1-S
= 1.1 V.
(6) V
G1-S
= 1 V.
(7) V
G1-S
= 0.9 V.
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| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1206,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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