參數(shù)資料
型號: BF1206
廠商: NXP Semiconductors N.V.
元件分類: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1206<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁數(shù): 3/22頁
文件大小: 628K
代理商: BF1206
2003 Nov 17
3
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF1206
plastic surface mounted package; 6 leads
SOT363
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
65
6
30
10
10
180
+150
150
V
mA
mA
mA
mW
C
C
T
s
107
C; note 1
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
240
K/W
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