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參數(shù)資料
| 型號： | BF1206 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1206<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 628K |
| 代理商： | BF1206 |
2003 Nov 17
10
NXP Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
handbook, halfpage
MLE268
10
f (MHz)
Yis
(mS)
10
2
10
3
2
10
1
10
1
bis
gis
Fig.15 Input admittance as a function of frequency;
typical values; amplifier a.
V
DS
= 5 V; V
G2
= 4 V; I
D
= 18 mA; T
amb
= 25
C.
handbook, halfpage
MLE269
10
f (MHz)
10
2
10
3
3
10
2
10
1
10
3
10
2
10
1
rs
(deg)
yrs
(
μ
S)
yrs
rs
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
V
DS
= 5 V; V
G2
= 4 V; I
D
= 18 mA; T
amb
= 25
C.
handbook, halfpage
10
1
2
MLE270
10
f (MHz)
10
3
10
2
10
2
10
1
fs
(deg)
yfs
(mS)
yfs
fs
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
V
DS
= 5 V; V
G2
= 4 V; I
D
= 18 mA; T
amb
= 25
C.
handbook, halfpage
MLE271
10
f (MHz)
Yos
(mS)
10
2
10
3
1
10
2
10
1
bos
gos
Fig.18 Output admittance as a function of
frequency; typical values; amplifier a.
V
DS
= 5 V; V
G2
= 4 V; I
D
= 18 mA; T
amb
= 25
C.
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PDF描述 |
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| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1206,115 | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1206F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1206F,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1207 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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