參數(shù)資料
型號(hào)： BF1205C
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Dual N-channel dual-gate MOSFET
封裝： BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁(yè)數(shù)： 4/23頁(yè)
文件大小： 288K
代理商： BF1205C
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
4 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
7. Static characteristics
[1]
R
G1
connects gate 1 (b) to V
GG
= 0 V (see
Figure 3
).
R
G1
connects gate 1 (b) to V
GG
= 5 V (see
Figure 3
).
[2]
Fig 1.
Power derating curve.
T
sp
(C)
0
200
150
50
100
001aac193
100
150
50
200
250
P
tot
(mW)
0
Table 7.
T
j
= 25
C.
Symbol
Per MOS-FET; unless otherwise specified
V
(BR)DSS
drain-source breakdown voltage
Static characteristics
Parameter
Conditions
Min
Typ
Max Unit
V
G1-S
= V
G2-S
= 0 V; I
D
= 10
A
amplifier a
amplifier b
V
GS
= V
DS
= 0 V; I
G1-S
= 10 mA
V
GS
= V
DS
= 0 V; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0 V; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0 V; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
A
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
A
V
G2-S
= 4 V; V
DS(b)
= 5 V; R
G1
= 150 k
amplifier a; V
DS(a)
= 5 V
amplifier b
V
G2-S
= V
DS(a)
= 0 V
amplifier a; V
G1-S(a)
= 5 V; I
D(b)
= 0 A
amplifier b; V
G1-S(b)
= 5 V; V
DS(b)
= 0 V
V
G2-S
= 4 V;
V
G1-S(a)
= V
DS(a)
= V
DS(b)
= 0 V;
V
G1-S(b)
= 0 V;
6
6
6
6
0.5
0.5
0.3
0.4
-
-
-
-
-
-
-
-
-
-
10
10
1.5
1.5
1.0
1.0
V
V
V
V
V
V
V
V
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
gate 1-source breakdown voltage
gate 2-source breakdown voltage
forward source-gate 1 voltage
forward source-gate 2 voltage
gate 1-source threshold voltage
gate 2-source threshold voltage
drain-source current
[1]
14
-
-
24
17
mA
mA
[2]
9
I
G1-S
gate 1 cut-off current
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate 2 cut-off current
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參數(shù)描述
BF1205C T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1205C,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1206 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1206,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1206115 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
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