參數(shù)資料
型號(hào): BF1205C
廠(chǎng)商: NXP Semiconductors N.V.
元件分類(lèi): 功率晶體管
英文描述: Dual N-channel dual-gate MOSFET
封裝: BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;
文件頁(yè)數(shù): 12/23頁(yè)
文件大小: 288K
代理商: BF1205C
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
12 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
8.2.1
Graphs for amplifier b
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(b)
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V; T
j
= 25
C.
Fig 17. Transfer characteristics; typical values.
(1) V
G1-S(b)
= 1.6 V.
(2) V
G1-S(b)
= 1.5 V.
(3) V
G1-S(b)
= 1.4 V.
(4) V
G1-S(b)
= 1.3 V.
(5) V
G1-S(b)
= 1.2 V.
(6) V
G1-S(b)
= 1.1 V.
(7) V
G1-S(b)
= 1 V.
V
G2-S
= 4 V; V
DS(a)
= V
G1-S(a)
= 0 V; T
j
= 25
C.
Fig 18. Output characteristics; typical values.
V
G1-S
(V)
0
2
1.6
0.8
1.2
0.4
001aaa568
(1)
10
20
30
I
D
(mA)
0
(4)
(5)
(6)
(7)
(2)
(3)
001aaa569
V
DS
(V)
0
6
4
2
16
8
24
32
I
D
(mA)
0
(1)
(2)
(5)
(6)
(7)
(4)
(3)
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