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參數(shù)資料
| 型號(hào)： | BF1205C |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1205C<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 15/23頁 |
| 文件大?。?/td> | 288K |
| 代理商： | BF1205C |
BF1205C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 7 September 2011
15 of 23
NXP Semiconductors
BF1205C
Dual N-channel dual gate MOS-FET
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
V
DS(b)
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V; T
j
= 25
C;
R
G1(b)
= 150 k
(connected to V
GG
); see
Figure 3
.
Fig 25. Gate 1 current as a function of gate 2 voltage;
typical values.
V
DS(b)
= 5 V; V
GG
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V;
R
G1(b)
= 150 k
(connected to V
GG
); f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
C; see
Figure 34
.
Fig 26. Unwanted voltage for 1 % cross-modulation as
a function of gain reduction; typical values.
V
G2-S
(V)
0
6
4
2
001aaa576
10
20
30
I
G1
(
μ
A)
0
(1)
(2)
(4)
(5)
(3)
001aaa577
gain reduction (dB)
0
60
40
20
100
90
110
120
V
unw
(dB
μ
V)
80
V
DS(b)
= 5 V; V
GG
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V;
R
G1(b)
= 150 k
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
C; see
Figure 34
.
Fig 27. Typical gain reduction as a function of AGC
voltage.
V
DS(b)
= 5 V; V
GG
= 5 V; V
DS(a)
= V
G1-S(a)
= 0 V;
R
G1(b)
= 150 k
(connected to V
GG
); f = 50 MHz;
T
amb
= 25
C; see
Figure 34
.
Fig 28. Drain current as a function of gain reduction;
typical values.
V
AGC
(V)
0
4
3
1
2
001aaa578
30
20
40
10
0
gain
reduction
(dB)
50
001aaa579
gain reduction (dB)
0
60
40
20
8
4
12
16
I
D
(mA)
0
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參數(shù)描述 |
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| BF1205C T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205C,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1206115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
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