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參數(shù)資料
| 型號： | BF1205 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件頁數(shù)： | 3/25頁 |
| 文件大小： | 626K |
| 代理商： | BF1205 |
2003 Sep 30
3
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
P
tot
drain-source voltage
drain current (DC)
total power dissipation
10
30
200
V
mA
mW
T
s
102
C; temperature at the
soldering point of the source lead
I
D
= 12 mA
amp. a: f = 1 MHz
amp. b: f = 1 MHz
f = 1 MHz
amp. a: f = 800 MHz
amp. b: f = 800 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
y
fs
C
ig1-ss
forward transfer admittance
input capacitance at gate 1
26
98
31
1.8
2.0
20
1.2
1.4
102
40
2.3
2.5
1.9
2.1
mS
pF
pF
fF
dB
dB
dB
V
C
rss
NF
reverse transfer capacitance
noise figure
X
mod
cross-modulation
100
105
dB
V
T
j
junction temperature
150
C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
65
10
30
10
10
200
+150
150
V
mA
mA
mA
mW
C
C
T
s
102
C; note
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
240
K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1205,115 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205,135 | 功能描述:射頻MOSFET小信號晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射頻MOSFET小信號晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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