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參數(shù)資料
| 型號(hào)： | BF1205 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free |
| 文件頁(yè)數(shù)： | 11/25頁(yè) |
| 文件大?。?/td> | 626K |
| 代理商： | BF1205 |
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2003 Sep 30
11
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1205
handbook, halfpage
yis
(mS)
MGX441
10
1
10
10
2
10
3
f (MHz)
10
2
10
1
gis
bis
Fig.14 Input admittance as a function of frequency;
typical values; amplifier a.
V
DS
(a) = 5 V; V
G2-S
(a) = 4 V; V
DS
(b) = V
G1-S
(b) = 0 V;
I
D
(a) = 12 mA.
handbook, halfpage
MGX442
2
10
1
10
2
10
1
10
10
2
10
3
f (MHz)
|
yfs
|
(mS)
fs
(deg)
fs
|
yfs
|
Fig.15 Forward transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
V
DS
(a) = 5 V; V
G2-S
(a) = 4 V; V
DS
(b) = V
G1-S
(b) = 0 V;
I
D
(a) = 12 mA.
handbook, halfpage
MGX443
10
2
10
1
10
10
2
10
3
f (MHz)
10
2
10
1
rs
(deg)
10
3
|
yrs
|
(
μ
S)
rs
|
yrs
|
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values;
amplifier a.
V
DS
(a) = 5 V; V
G2-S
(a) = 4 V; V
DS
(b) = V
G1-S
(b) = 0 V;
I
D
(a) = 12 mA.
handbook, halfpage
MGX444
1
10
10
2
10
3
f (MHz)
10
2
10
1
yos
(mS)
gos
bos
Fig.17 Output admittance as a function of
frequency; typical values; amplifier a.
V
DS
(a) = 5 V; V
G2-S
(a) = 4 V; V
DS
(b) = V
G1-S
(b) = 0 V;
I
D
(a) = 12 mA.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1205,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205,135 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1205115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF1205C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
| BF1205C T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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