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  • 參數(shù)資料
    型號(hào): BF1205
    廠商: NXP Semiconductors N.V.
    元件分類: MOSFETs
    英文描述: Dual N-channel dual-gate MOSFET
    封裝: BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1205<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free
    文件頁數(shù): 23/25頁
    文件大?。?/td> 626K
    代理商: BF1205
    2003 Sep 30
    23
    NXP Semiconductors
    Product specification
    Dual N-channel dual gate MOS-FET
    BF1205
    DATA SHEET STATUS
    Notes
    1.
    2.
    Please consult the most recently issued document before initiating or completing a design.
    The product status of device(s) described in this document may have changed since this document was published
    and may differ in case of multiple devices. The latest product status information is available on the Internet at
    URL http://www.nxp.com.
    DOCUMENT
    STATUS
    (1)
    PRODUCT
    STATUS
    (2)
    DEFINITION
    Objective data sheet
    Development
    This document contains data from the objective specification for product
    development.
    This document contains data from the preliminary specification.
    This document contains the product specification.
    Preliminary data sheet
    Product data sheet
    Qualification
    Production
    DEFINITIONS
    Product specification
    The information and data
    provided in a Product data sheet shall define the
    specification of the product as agreed between NXP
    Semiconductors and its customer, unless NXP
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    those described in the Product data sheet.
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    NXP Semiconductors
    reserves the right to make changes to information
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    相關(guān)PDF資料
    PDF描述
    BF1205 Dual N-channel dual-gate MOSFET
    BF1206F Dual N-channel dual-gate MOSFET
    BF1206F Dual N-channel dual-gate MOSFET
    BF1206 Dual N-channel dual-gate MOSFET
    BF1206 Dual N-channel dual-gate MOSFET
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    BF1205,115 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
    BF1205,135 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS(導(dǎo)通): 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
    BF1205115 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
    BF1205C 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET
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