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參數(shù)資料
| 型號(hào)： | BF1204 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁(yè)數(shù)： | 6/13頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | BF1204 |
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2010 Sep 16
6
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
handbook, halfpage
(mA)
0
50
0
4
8
12
16
10
20
30
40
IG1 (
μ
A)
MCD956
Fig.7
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
VGG (V)
1
5
12
4
0
8
2
3
4
MCD957
Fig.8
Drain current as a function of gate 1 supply
voltage (= V
GG
); typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.19.
handbook, halfpage
(mA)
0
2
4
6
VGG
=
VDS (V)
0
16
12
8
4
MCD958
RG1
=
68 k
Ω
82 k
Ω
100 k
Ω
120 k
Ω
150 k
Ω
180 k
Ω
220 k
Ω
Fig.9
Drain current as a function of gate 1 (= V
GG
)
and drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
R
G1
connected to V
GG
; see Fig.19.
handbook, halfpage
ID
(mA)
0
2
4
6
12
4
0
8
MCD959
VG2-S (V)
4.5 V
4 V
3 V
VGG
=
5 V
3.5 V
V
DS
= 5 V; T
j
= 25
C.
R
G1
= 120 k
(connected to V
GG
); see Fig.19.
Fig.10 Drain current as a function of gate 2
voltage; typical values.
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| BF1204 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
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| BF1204.115 | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R |
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