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參數(shù)資料
| 型號(hào)： | BF1204 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封裝： | BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,;BF1204<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<week 23, 2003,; |
| 文件頁(yè)數(shù)： | 2/13頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | BF1204 |
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2010 Sep 16
2
NXP Semiconductors
Product specification
Dual N-channel dual gate MOS-FET
BF1204
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1204 is a combination of two equal dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor has a
SOT363 micro-miniature plastic package.
PINNING - SOT363
PIN
DESCRIPTION
1
2
3
4
5
6
gate 1 (a)
gate 2
gate 1 (b)
drain (b)
source
drain (a)
handbook, halfpage
MBL252
AMP
a
AMP
b
d (a)
s
d (b)
g1 (a)
Top view
g2
g1 (b)
1
3
2
4
5
Fig.1 Simplified outline and symbol.
Marking code: L3*
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the source lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
P
tot
y
fs
C
ig1-s
C
rss
NF
X
mod
T
j
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
25
30
1.7
15
1.1
105
10
30
200
40
2.2
1.8
150
V
mA
mW
mS
pF
fF
dB
dB
V
C
T
s
102
C; note 1
I
D
= 12 mA; f = 1 MHz
I
D
= 12 mA; f = 1 MHz
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BF1204 T/R | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,115 | 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204,135 | 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 10V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel |
| BF1204.115 | 制造商:NXP Semiconductors 功能描述:Cut Tape 制造商:NXP Semiconductors 功能描述:Trans RF MOSFET N-CH 10V 0.03A 6-Pin TSSOP T/R |
| BF1205 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Dual N-channel dual gate MOS-FET |
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