參數(shù)資料
型號： BF1109WR
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1109WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;
文件頁數(shù)： 4/15頁
文件大小： 347K
代理商： BF1109WR
1997 Dec 08
4
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1109; BF1109R; BF1109WR
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board.
STATIC CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common source; T
amb
= 25
C; V
G2-S
= 4 V; V
DS
= 9 V; self-biasing current; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient in free air
thermal resistance from junction to soldering point
note 1
350
200
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
1.2
16
20
20
UNIT
V
(BR)DSS
V
(BR)G1-SS
gate 1-source breakdown voltage
V
(BR)G2-SS
gate 2-source breakdown voltage
V
G2-S (th)
gate 2-source threshold voltage
I
DSX
self-biasing drain current
I
G1-SS
gate 1 cut-off current
I
G2-SS
gate 2 cut-off current
drain-source breakdown voltage
V
G1-S
= V
G2-S
= 0; I
D
= 10
A
V
G2-S
= 0; I
G1-S
= 10
A; I
D
= 0
V
G1-S
= V
DS
= 0; I
G2-S
= 10
A
V
G1-S
= 9 V; V
DS
= 9 V; I
D
= 20
A
V
G2-S
= 4 V; V
DS
= 9 V
V
G1-S
= 9 V; V
G2-S
= 0; I
D
= 0
V
G1-S
= V
DS
= 0; V
G2-S
= 9 V
11
11
11
0.3
8
V
V
V
V
mA
nA
nA
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
F
G
p
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
2.7
40
2.5
UNIT
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
reverse transfer capacitance f = 1 MHz
noise figure
power gain
pulsed; T
j
= 25
C
f = 1 MHz
f = 1 MHz
f = 1 MHz
24
30
2.2
1.5
1.3
25
1.5
38
mS
pF
pF
pF
fF
dB
dB
f = 800 MHz; Y
S
= Y
S opt
G
S
= 2 mS; B
S
= B
S opt
; G
L
= 0.5 mS;
B
L
= B
L opt
; f = 200 MHz; see Fig.16
G
S
= 3.3 mS; B
S
= B
S opt
; G
L
= 1 mS;
B
L
= B
L opt
; f = 800 MHz; see Fig.17
input level for k = 1% at 0 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; see Fig.18
input level for k = 1% at 40 dB AGC;
f
w
= 50 MHz; f
unw
= 60 MHz; see Fig.18
20
dB
X
mod
cross-modulation
85
dB
V
100
dB
V
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