參數(shù)資料
型號(hào)： BF1118R
廠商： NXP Semiconductors N.V.
元件分類： 功率晶體管
英文描述： Silicon RF switches
封裝： BF1118R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<Always Pb-free,;
文件頁(yè)數(shù)： 1/13頁(yè)
文件大小： 134K
代理商： BF1118R
1. Product profile
1.1 General description
These switches are a combination of a depletion type Field-Effect Transistor (FET) and a
band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are
encapsulated in the SOT143B, SOT143R, SOT343N and SOT343R respectively. The low
loss and high isolation capabilities of these devices provide excellent RF switching
functions. The gate of the MOSFET can be isolated from ground with the diode, resulting
in low losses. Integrated diodes between gate and source and between gate and drain
protect against excessive input voltage surges.
1.2 Features and benefits
Specially designed for low loss RF switching up to 1 GHz
1.3 Applications
Various RF switching applications such as:
Passive loop through for VCR tuner
Transceiver switching
1.4 Quick reference data
[1]
I
F
= diode forward current.
BF1118; BF1118R; BF1118W;
BF1118WR
Silicon RF switches
Rev. 1 — 29 June 2010
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.
Symbol
L
ins(on)
Quick reference data
Parameter
on-state insertion loss
Conditions
R
S
= R
L
= 50
Ω
; f
≤
1 GHz;
V
SK
= V
DK
= 0 V; I
F
= 0 mA
R
S
= R
L
= 50
Ω
; f
≤
1 GHz;
V
SK
= V
DK
= 3.3 V; I
F
= 1 mA
V
KS
= 0 V; I
D
= 1 mA
V
DS
= 1 V; I
D
= 20
μ
A
Min
Typ
-
Max
2.5
Unit
dB
[1]
-
ISL
off
off-state isolation
30
-
-
dB
R
DSon
V
GS(p)
drain-source on-state resistance
gate-source pinch-off voltage
-
-
15
2
23.3
2.44
Ω
V
相關(guān)PDF資料
PDF描述
BF1118W Silicon RF switches
BF1118WR Silicon RF switches
BF1118R Silicon RF switches
BF1118W Silicon RF switches
BF1118WR Silicon RF switches
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1118R,215 功能描述:RF 開(kāi)關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開(kāi)關(guān)數(shù)量:Single 開(kāi)關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
BF1118W,115 功能描述:RF 開(kāi)關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開(kāi)關(guān)數(shù)量:Single 開(kāi)關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
BF1118WR,115 功能描述:RF 開(kāi)關(guān) IC SILICON RF SWITCHES RoHS:否 制造商:M/A-COM Technology Solutions 開(kāi)關(guān)數(shù)量:Single 開(kāi)關(guān)配置:SPDT 介入損耗:0.6 dB 截止隔離（典型值）:43 dB 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PQFN-16 封裝:Reel
BF1125-3 功能描述:EMI/RFI 抑制器及鐵氧體 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT
BF1125-5 功能描述:EMI/RFI 抑制器及鐵氧體 EMI/RFI Suppressor Splt Fer Rnd Cbl Snp RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT
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