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參數(shù)資料
| 型號(hào)： | BF1107W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel single gate MOS-FETs |
| 中文描述： | Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | BF1107W |
1999 May 14
3
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1.
Soldering point of the gate lead.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
DYNAMIC CHARACTERISTICS
Common gate; T
amb
= 25
°
C.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
SD
V
DG
V
SG
I
D
T
stg
T
j
drain-source voltage
source-drain voltage
drain-gate voltage
source-gate voltage
drain current
storage temperature
junction temperature
65
3
3
7
7
10
+150
150
V
V
V
V
mA
°
C
°
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point; note 1
260
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
3
MAX.
4.5
10
100
UNIT
V
(BR)GSS
V
GSoff
I
DSX
I
GSS
gate-source breakdown voltage
gate-source pinch-off voltage
drain-source leakage current
gate cut-off current
V
DS
= 0; I
GS
= 0.1 mA
V
DS
= 1 V; I
D
= 20
μ
A
V
GS
=
5 V; V
DS
= 2 V
V
GS
=
5 V; V
DS
= 0
7
V
V
μ
A
nA
SYMBOL
S
21(on)
2
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
losses (on-state)
V
SG
= V
DG
= 0; R
S
= R
L
= 50
;
f = 50 to 860 MHz
V
SG
= V
DG
= 0; R
S
= R
L
= 75
;
f = 50 to 860 MHz
V
SG
= V
DG
= 5 V; R
S
= R
L
= 50
;
f = 50 to 860 MHz
V
SG
= V
DG
= 5 V; R
S
= R
L
= 75
;
f = 50 to 860 MHz
V
GS
= 0; I
D
= 1 mA
V
SG
= V
DG
= 5 V; f = 1 MHz
V
SG
= V
DG
= 0; f = 1 MHz
V
SG
= V
DG
= 5 V; f = 1 MHz
V
SG
= V
DG
= 0; f = 1 MHz
2.5
dB
3.5
dB
S
21(off)
2
isolation (off-state)
30
dB
30
dB
R
DSon
C
ig
drain-source on-resistance
input capacitance
12
0.9
1.5
0.9
1.5
20
2
2
pF
pF
pF
pF
C
og
output capacitance
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