參數(shù)資料
型號: BF1107W
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: N-channel single gate MOS-FETs
中文描述: Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
文件頁數(shù): 2/8頁
文件大小: 54K
代理商: BF1107W
1999 May 14
2
Philips Semiconductors
Product specification
N-channel single gate MOS-FETs
BF1107; BF1107W
FEATURES
Currentless RF switch.
APPLICATIONS
Various RF switching applications such as:
- Passive loop through for VCR tuner
- Transceiver switching.
DESCRIPTION
The BF1107 and BF1107W are depletion type field-effect
transistors in SOT23 and SOT323 packages respectively.
The low loss and high isolation capabilities of this
MOS-FET provide excellent RF switching functions.
Integrated diodes between gate and source and between
gate and drain protect against excessive input voltage
surges. Drain and source are interchangeable.
PINNING
PIN
DESCRIPTION
BF1107
BF1107W
1
2
3
drain
source
gate
drain
source
gate
handbook, halfpage
MSB003
Top view
1
2
3
Fig.1 Simplified outline SOT23 (BF1107).
Marking code: S3p.
Fig.2 Simplified outline SOT323 (BF1107W).
Marking code: W3.
handbook, halfpage
2
3
1
MAM062
3
2
1
Top view
QUICK REFERENCE DATA
SYMBOL
S
21(on)
2
S
21(off)
2
R
DSon
V
GSoff
PARAMETER
CONDITIONS
MIN.
30
TYP.
12
3
MAX.
UNIT
losses (on-state)
isolation (off-state)
drain-source on-resistance
pinch-off voltage
R
S
= R
L
= 50
; f = 50 to 860 MHz
2.5
20
4.5
dB
dB
V
V
GS
= 0; I
D
= 1 mA
I
D
= 20
μ
A; V
DS
= 1 V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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