參數(shù)資料
型號(hào)： BF1105WR
廠商： NXP Semiconductors N.V.
元件分類： MOSFETs
英文描述： N-channel dual-gate MOSFET
封裝： BF1105WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,;BF1105WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week
文件頁(yè)數(shù)： 2/15頁(yè)
文件大小： 351K
代理商： BF1105WR
1997 Dec 02
2
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1105; BF1105R;
BF1105WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz.
Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with 5 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1105,
BF1105R and BF1105WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
PIN
DESCRIPTION
1
2
3
4
source
drain
gate 2
gate 1
Fig.1
Simplified outline
(SOT143B).
BF1105 marking code:
NEp.
handbook, 2 columns
Top view
MSB014
1
2
3
Fig.2
Simplified outline
(SOT143R).
BF1105R marking code:
NAp.
handbook, 2 columns
Top view
MSB035
1
2
4
Fig.3
Simplified outline
(SOT343R).
BF1105WR marking code:
NA.
alfpage
Top view
MSB842
2
1
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
25
TYP.
31
2.2
25
1.7
MAX.
UNIT
V
DS
I
D
P
tot
y
fs
C
ig1-ss
C
rss
F
X
mod
T
j
drain-source voltage
drain current
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
cross-modulation
operating junction temperature
7
30
200
2.7
40
2.5
150
V
mA
mW
mS
pF
fF
dB
dB
V
C
T
amb
80
C
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
相關(guān)PDF資料
PDF描述
BF1107 MOSFET N-channel switching transistor
BF1107 MOSFET N-channel switching transistor
BF1108 Silicon RF switches
BF1108 Silicon RF switches
BF1108R Silicon RF switches
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BF1105WR T/R 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1105WR,115 功能描述:射頻MOSFET小信號(hào)晶體管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1105WR,135 功能描述:射頻MOSFET小信號(hào)晶體管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
BF1107 制造商:NXP Semiconductors 功能描述:RF MOSFET N-Channel 3V 0.01A TO236AB
BF1107,215 功能描述:射頻MOSFET小信號(hào)晶體管 N-Channel 3V 10mA RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶體管極性:N-Channel 電阻汲極/源極 RDS（導(dǎo)通）: 汲極/源極擊穿電壓:6 V 閘/源擊穿電壓:6 V 漏極連續(xù)電流:30 mA 功率耗散:180 mW 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SC-88 封裝:Reel
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