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參數(shù)資料
| 型號(hào)： | BDX45 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP Darlington transistors |
| 中文描述： | 1 A, PNP, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | PLASTIC, TO-126, 3 PIN |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 65K |
| 代理商： | BDX45 |
1997 Jul 02
6
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e1
L
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.88
0.65
2.7
2.3
0.60
0.45
11.1
10.5
7.8
7.2
2.29
e
4.58
0.254
P
3.2
3.0
P1
3.9
3.6
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
16.5
15.3
1.5
0.9
L1
(1)
max
2.54
SOT32
TO-126
97-03-04
0
2.5
5 mm
scale
A
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads
SOT32
D
P1
P
E
e1
A
L
Q
c
bp
1
2
3
L1
w
M
e
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BDX47 | PNP Darlington transistors |
| BDY26A | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes |
| BDY26B | Varistor; Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:369VDC; Peak Surge Current (8/20uS), Itm:400A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):11J; Capacitance, Cd:45pF; Package/Case:5mm Disc |
| BDY26C | VARISTOR 470V 12J 5MM RADIAL ZA |
| BDY27AS | Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:30Vrms; Voltage Rating DC, Vdc:38VDC; Peak Surge Current (8/20uS), Itm:500A; Clamping Voltage 8/20us Max :93V; Peak Energy (10/1000uS):4.5J; Capacitance, Cd:2000pF |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BDX45_12 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX46 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX47 | 制造商:COMSET 制造商全稱:Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS |
| BDX53 | 功能描述:達(dá)林頓晶體管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| BDX53A | 功能描述:達(dá)林頓晶體管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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