參數(shù)資料
型號(hào)： BDX45
廠(chǎng)商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： PNP Darlington transistors
中文描述： 1 A, PNP, Si, POWER TRANSISTOR, TO-126
封裝： PLASTIC, TO-126, 3 PIN
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 65K
代理商： BDX45
1997 Jul 02
4
Philips Semiconductors
Product specification
PNP Darlington transistors
BDX45; BDX47
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BDX45
BDX47
collector cut-off current
BDX45
BDX47
emitter cut-off current
DC current gain
I
E
= 0; V
CB
=
60 V
I
E
= 0; V
CB
=
90 V
100
100
nA
nA
I
CES
V
BE
= 0; V
CE
=
45 V
V
BE
= 0; V
CE
=
80 V
I
C
= 0; V
EB
=
4 V
V
CE
=
10 V; see Fig. 2
I
C
=
150 mA
I
C
=
500 mA
I
C
=
500 mA; I
B
=
0.5 mA
I
C
=
500 mA; I
B
=
0.5 mA; T
j
= 150
°
C
I
C
=
1 A; I
B
=
4 mA
I
C
=
1 A; I
B
=
4 mA; T
j
= 150
°
C
I
C
=
500 mA; I
B
=
0.5 mA
I
C
=
1 A; I
B
=
4 mA
I
C
=
500 mA; V
CE
=
5 V; f = 100 MHz
50
50
50
nA
nA
nA
I
EBO
h
FE
1000
2000
200
1.3
1.3
1.6
1.6
1.9
2.2
V
CEsat
collector-emitter saturation
voltage
V
V
V
V
V
V
MHz
V
BEsat
base-emitter saturation voltage
f
T
transition frequency
Switching times (between 10% and 90% levels);
see Fig.3
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
500 mA; I
Bon
=
0.5 mA;
I
Boff
= 0.5 mA
500
200
300
700
550
150
ns
ns
ns
ns
ns
ns
相關(guān)PDF資料
PDF描述
BDX47 PNP Darlington transistors
BDY26A Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:275Vrms; Suppressor Type:Transient Voltage; Voltage Rating DC, Vdc:369VDC; Peak Surge Current @ 8/20uS:500A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):23J RoHS Compliant: Yes
BDY26B Varistor; Voltage Rating AC, Vrms:275Vrms; Voltage Rating DC, Vdc:369VDC; Peak Surge Current (8/20uS), Itm:400A; Clamping Voltage 8/20us Max :710V; Peak Energy (10/1000uS):11J; Capacitance, Cd:45pF; Package/Case:5mm Disc
BDY26C VARISTOR 470V 12J 5MM RADIAL ZA
BDY27AS Metal Oxide Varistor (MOV); Voltage Rating AC, Vrms:30Vrms; Voltage Rating DC, Vdc:38VDC; Peak Surge Current (8/20uS), Itm:500A; Clamping Voltage 8/20us Max :93V; Peak Energy (10/1000uS):4.5J; Capacitance, Cd:2000pF
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BDX45_12 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS
BDX46 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS
BDX47 制造商:COMSET 制造商全稱(chēng):Comset Semiconductor 功能描述:SILICON PLANAR DARLINGTON TRANSISTORS
BDX53 功能描述:達(dá)林頓晶體管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
BDX53A 功能描述:達(dá)林頓晶體管 60W 8A NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
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