參數(shù)資料
型號： BDL32
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： PNP BISS-Transistor(PNP BISS晶體管)
中文描述： 5 A, 10 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù)： 3/8頁
文件大小： 55K
代理商： BDL32
1999 Apr 29
3
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
92
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
50
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
=
10 V
I
E
= 0; V
CB
=
10 V; T
j
= 150
°
C
I
C
= 0; V
EB
=
5 V
V
CE
=
2 V; note 1
I
C
=
0.5 A
I
C
=
1 A
I
C
=
3 A
I
C
=
5 A
V
CE
=
1 V; I
C
=
2 A; note 1
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
200
180
120
50
120
V
CEsat
collector-emitter saturation voltage note 1
I
C
=
1 A; I
B
=
20 mA
I
C
=
2 A; I
B
=
200 mA
I
C
=
3 A; I
B
=
60 mA
I
C
=
5 A; I
B
=
100 mA
I
E
= i
e
= 0; V
CB
=
5 V; f = 1 MHz
I
C
=
500 mA; V
CE
=
10 V;
f = 100 MHz
100
250
400
600
1
150
mV
mV
mV
V
pF
MHz
C
c
f
T
collector capacitance
transition frequency
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