參數(shù)資料
型號(hào): BDL32
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: PNP BISS-Transistor(PNP BISS晶體管)
中文描述: 5 A, 10 V, PNP, Si, POWER TRANSISTOR
文件頁數(shù): 2/8頁
文件大?。?/td> 55K
代理商: BDL32
1999 Apr 29
2
Philips Semiconductors
Product specification
PNP BISS-transistor
BDL32
FEATURES
High current (max. 5 A)
Low voltage (max. 10 V)
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
PNP BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. NPN complement: BDL31.
PINNING
PIN
DESCRIPTION
1
2
3
4
base
not connected
emitter
collector
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM373
Top view
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
10
5
5
10
1
1.35
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
A
W
°
C
°
C
°
C
T
amb
25
°
C; note 1
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