參數(shù)資料
型號(hào)： BDS11IG
英文描述： Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶體管(TO257金屬封裝))
中文描述： 硅npn型Epitiaxial基地晶體管TO257金屬包（npn型外延型硅晶體管（TO257金屬封裝））
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 14K
代理商： BDS11IG
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
￡
75°C
Storage Temperature
Junction Temperature
60V
60V
80V
80V
5V
15A
5A
90W
100V
100V
–65 TO 200°C
200°C
LA B
S E M E
BDS10IG
BDS11IG
BDS12IG
MECHANICAL DATA
Dimensions in mm(inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
Prelim. 9/98
BDS10
BDS11
BDS12
SILICON NPN
EPITAXIAL BASE IN
TO257 METAL PACKAGE
FEATURES
HERMETIC TO257 ISOLATED METAL
PACKAGES
HIGH RELIABILITY
MILITARY AND SPACE OPTIONS
SCREENING TO CECC LEVELS
ALSO AVAILABLE IN TO220 METAL AND
TO220 CERAMIC SURFACE MOUNT
PACKAGES
APPLICATIONS
POWER LINEAR AND SWITCHING
APPLICATIONS
GENERAL PURPOSE POWER
TO257
– TO257 Isolated Metal Package.
Pin 1
– Base
Pin 2
– Collector
Pin 3
– Emitter
1 2 3
0.89 (0.035)
1.14 (0.045)
10.41 (0.410)
10.67 (0.420)
3.56 (0.140)
3.81 (0.150)
4.83 (0.190)
5.08 (0.200)
1
1
1
1
1
1
0.64 (0.025)
0.89 (0.035)
3.05 (0.120)
BSC
2.54 (0.100)
BSC
Dia.
1
1
Dia.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
相關(guān)PDF資料
PDF描述
BDS12IG Silicon NPN Epitiaxial Base Transistor In TO257 Metal Package(NPN外延型硅晶體管(TO257金屬封裝))
BDS10IG SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS11IG SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS12IG SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE
BDS10 Silicon NPN Epitiaxial Base Transistor In TO220 Metal Package And SMD1 Package(NPN外延型硅晶體管(TO220金屬封裝或SMD1封裝))
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