參數(shù)資料
型號： BDL31
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： NPN BISS-Transistor(NPN BISS晶體管)
中文描述： 5 A, 10 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù)： 3/8頁
文件大?。?/td> 43K
代理商： BDL31
1999 Apr 28
3
Philips Semiconductors
Product specification
NPN BISS-transistor
BDL31
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Note
1.
Pulse test: t
p
≤
300
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
92
10
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
V
CE
= 2 V; note 1
I
C
= 0.5 A
I
C
= 1 A
I
C
= 3 A
I
C
= 5 A
V
CE
= 1 V; I
C
= 2 A; note 1
note 1
I
C
= 1 A; I
B
= 20 mA
I
C
= 2 A; I
B
= 200 mA
I
C
= 3 A; I
B
= 60 mA
I
C
= 5 A; I
B
= 100 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= 500 mA; V
CE
= 10 V; f = 100 MHz
50
50
50
nA
μ
A
nA
I
EBO
h
FE
emitter cut-off current
DC current gain
200
200
150
100
180
V
CEsat
collector-emitter saturation
voltage
100
180
350
450
800
130
mV
mV
mV
mV
pF
MHz
C
c
f
T
collector capacitance
transition frequency
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