參數(shù)資料
型號: BDL31
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: NPN BISS-Transistor(NPN BISS晶體管)
中文描述: 5 A, 10 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 2/8頁
文件大?。?/td> 43K
代理商: BDL31
1999 Apr 28
2
Philips Semiconductors
Product specification
NPN BISS-transistor
BDL31
FEATURES
High current (max. 5 A)
Low voltage (max. 10 V)
Low collector-emitter saturation voltage ensures
reduced power consumption.
APPLICATIONS
Battery powered units where high current and low power
consumption are important.
DESCRIPTION
NPN BISS (Breakthrough In Small Signal) transistor in a
SOT223 plastic package. PNP complement: BDL32.
PINNING
PIN
DESCRIPTION
1
2
3
4
base
not connected
emitter
collector
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM372
Top view
3
4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
40
10
6
5
10
1
1.35
+150
150
+150
V
V
V
A
A
A
W
°
C
°
C
°
C
T
amb
25
°
C; note 1
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