參數(shù)資料
型號: BDCO5
英文描述: 1 Watt NPN Silicon High Voltage Transistor
中文描述: 1瓦特NPN硅高壓晶體管
文件頁數(shù): 3/4頁
文件大?。?/td> 141K
代理商: BDCO5
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
C
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
100
50
20
10
5.0
2.0
1.0
0.5
0.2
100
70
TJ = 25
°
C
Ceb
IC, COLLECTOR CURRENT (mA)
Figure 6. Current–Gain — Bandwidth Product
100
70
50
30
20
10
TJ = 25
°
C
VCE = 20 V
f = 20 MHz
f
T
200
1.0
2.0
3.0
5.0
7.0
10
20
30
50
Ccb
1.0
20
5.0
10
50
70
2.0
100
3.0
7.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region — Safe Operating Area
10
I
20
50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
500
200
100
50
20
10
100
200
300
100
μ
s
1.0 ms
TA = 25
°
C
1 k
DUTY CYCLE
10%
1.0 s
30
IC, COLLECTOR CURRENT (mA)
V
1.4
0
1.0
20
TJ = 25
°
C
VBE(on) @ VCE = 10 V
VCE(sat) @ IC/IB = 10
5.0
10
50
70
VBE(sat) @ IC/IB = 10
2.0
100
IC, COLLECTOR CURRENT (mA)
2.5
1.0
R
θ
VB for VBE
R
θ
°
3.0
7.0
1.2
1.0
0.8
0.6
0.4
0.2
20
5.0
10
50
70
2.0
100
3.0
7.0
1.5
2.0
1.0
0.5
0
–0.5
–1.0
–1.5
–2.0
–2.5
IC
IB
10
R
θ
VC for VCE(sat)
25
°
C to 125
°
C
–55
°
C to 25
°
C
–55
°
C to 125
°
C
30
30
5.0
Figure 3. “On” Voltages
Figure 4. Temperature Coefficients
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