參數(shù)資料
型號: BD330
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: PNP power transistor(PNP功率晶體管)
中文描述: 3 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁數(shù): 7/8頁
文件大?。?/td> 44K
代理商: BD330
1999 Apr 26
7
Philips Semiconductors
Product specification
PNP power transistor
BD330
NOTES
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BD437T Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Current, It av:15A; Holding Current:70mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
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BD533FI Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25mA; Current, It av:10A; Holding Current:35mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
BD533FP Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes
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