參數(shù)資料
型號(hào)： BD330
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： PNP power transistor(PNP功率晶體管)
中文描述： 3 A, 20 V, PNP, Si, POWER TRANSISTOR, TO-126
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 44K
代理商： BD330
1999 Apr 26
2
Philips Semiconductors
Product specification
PNP power transistor
BD330
FEATURES
High current (max. 3 A)
Low voltage (max. 20 V).
APPLICATIONS
Power switching and amplification, especially in portable
equipment or e.g. car radio output stages.
DESCRIPTION
PNP power transistor in a TO-126; SOT32 plastic
package. NPN complement: BD329.
PINNING
PIN
DESCRIPTION
1
2
emitter
collector, connected to metal part of
mounting surface
base
3
Fig.1
Simplified outline (TO-126; SOT32)
and symbol.
handbook, halfpage
MAM272
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
32
20
5
3
3
1
15
+150
150
+150
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
65
65
V
V
V
A
A
A
W
°
C
°
C
°
C
T
mb
≤
45
°
C
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